Fariba Hatami is a Lecturer and Senior Scientist at the Department of Physics, Humboldt-Universität zu Berlin. Her research revolves around experimental semiconductor physics, connecting materials science and device engineering. Key focuses include meticulous control of epitaxial growth for quantum heterostructures and thin films, optimizing device performance, and spearheading novel hybrid device concepts for optoelectronics and integrated photonics. Her academic journey began with a Diplom in Physics from the Technical University Berlin in 1996, working on GaSb/GaAs quantum dots. She earned her Ph.D. in Experimental Physics from Humboldt-Universität zu Berlin in 2002, concentrating on the growth and properties of InP quantum structures in GaP and InGaP. During her postdoc as an Alexander von Humboldt research fellow (Feodor-Lynen) at Stanford University from 2003 to 2005, her research focused on infrared and THz emitters for Bio-Medical Imaging. In 2016, she served as a Visiting Scholar at the Ginzton Laboratory, Stanford University. She has authored more than 100 papers, four patents and patent applications, and a book chapter.

Title of Talk : Towards High Scalability in Monolithic Integration of III-V Micro Light Emitters on CMOS-Compatible Si Nanotips Wafers