Bin Niu, born in 1986, received the B.S. degree in electronics from Huazhong University of Science and Technology in 2008, and Ph. D. degree in microelectronics and solid state electronics from Institute of Semiconductors, Chinese Academy of Sciences in 2013. Since then he has been working at Nanjing Electronic Devices Institute, focusing at InP, GaAs based terahertz electronic and photonic devices design and process, and now is a researcher-level senior engineer in the key lab department. Recently he’s research interest is focus in GaAs/AlGaAs quantum photonic devices and its application.

Title of Talk : AlGaAs Photon Source and its Quantum Photonic Integration